FIELD: physics.
SUBSTANCE: methods for nanostructuring and modifying the surface properties of silicon nanomaterials. A method for changing the photoluminescence wavelength of porous silicon as a result of modifying the surface of porous silicon with ion beams, according to the invention, involves irradiating a flat surface of a porous silicon sample placed in a vacuum with energetic ion fluxes with a flux density of 0.01-0.5 μA/cm2, ensuring a displacement parameter per atom (DPA) from 0 to 1.
EFFECT: possibility to controllably change the value of the maximum wavelength of photoluminescence of porous silicon using ion irradiation, as a result of changing the DPA value - the number of displacements per atom.
7 cl, 2 dwg
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