ION SOURCE AND APPARATUS FOR PLASMA TREATMENT Russian patent published in 2011 - IPC H01J27/16 

FIELD: physics.

SUBSTANCE: ion source is fitted with a high-frequency antenna (16) which is mounted on the outer side of an enclosing wall (15) made from dielectric material and borders the plasma generation chamber (14) and a protective housing (26) made from dielectric material and restricting deposition on the inner surrounding surface of the enclosing wall (15), located in front of the high-frequency antenna (16) inside the plasma generation chamber (14). The structure, made from dielectric material, can prevent increase in high-frequency power which is need for induction coupling with the plasma. The protective housing (26) is formed with a slit (26a) in the direction which intersects the direction of winding of the high-frequency antenna (16). Since this design can prevent continuous deposition on the inner surface of the enclosing wall in the direction of winding of the high-frequency antenna, inductive losses between the high-frequency antenna and the plasma generation chamber can be efficiently prevented, even if a film is deposited from electroconductive material.

EFFECT: high stability and prolonged maintenance of the plasma.

9 cl, 26 dwg