GAS-DISCHARGE SPUTTERING APPARATUS BASED ON PLANAR MAGNETRON WITH ION SOURCE Russian patent published in 2021 - IPC C23C14/35 C23C14/40 H01J37/34 

FIELD: electronic circuitry.

SUBSTANCE: invention relates to a gas-discharge sputtering apparatus for applying composite coatings by conducting non-equilibrium plasma-chemical processes combining ion sputtering in a magnetron discharge and sputtering by an ion beam. The apparatus is comprised of a planar magnetron with a central anode, a plasma ion source, annular magnets, high-voltage rectifiers, and discharge gas power supplies. The discharge chamber of the plasma ion source is installed at the periphery of the magnetron at a distance of 0.1 m. The emission channel of the emitter cathode is located on the same axis with the central anode of the magnetron, wherein said anode serves as an additional target sputtered by the ion beam and is located 5 mm higher than the magnetron cathode and parallel thereto. During operation of the apparatus, the trace of the ion beam is marked on the central anode and partially on the cathode of the magnetron, and the magnetron discharge is ignited at a pressure below 8·10^-2 Pa. Holes are made on the side wall of the anode of the magnetron and in the cathode cavity of the plasma ion source for separate supply of a reactive gas to the magnetron and of an inert gas into the discharge chamber of the ion source, respectively. Substrates are installed circumferentially between the magnetron and the plasma ion source near the accelerating electrode, parallel to the cathode of the magnetron, the centre of the circumference is located on the axis of the ion beam.

EFFECT: increase in the efficiency of the process due to optimisation of combination of functions of a planar magnetron and a plasma ion source, based on longitudinal injection of an ion beam into the magnetron and the expanded operational capabilities of planar magnetrons during synthesis of nanostructured composite coatings.

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