FIELD: microelectronics techniques, micro- and nano-technologies, namely design of plasmo-chemical reactor in which processes for etching and depositing different materials are realized.
SUBSTANCE: plasmo-chemical reactor includes reaction chamber, inductor, substrate holder, thin-wall cylindrical metallic shield and heat removal struts whose properties provide rate of temperature change of screen and time period for setting is stationary temperature. Thin-wall cylindrical metallic screen is secured to heat removal struts inside reaction chamber and it is spaced from walls of reaction chamber.
EFFECT: possibility for separate control of basic content of plasma composition and for depositing high-quality coating.
2 cl, 1 dwg, 1 ex
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