PROCEDURE FOR PRODUCTION OF MONO-CRYSTAL Russian patent published in 2011 - IPC C30B15/08 C30B15/02 

Abstract RU 2418108 C1

FIELD: metallurgy.

SUBSTANCE: procedure for production of mono-crystal by withdrawal downward consists in generation and maintaining corresponding temperature gradient field in shaft vacuum multi-zone furnace, in introduction of powder-like raw material from external feeder into electro-conducting device for raw material melting, in maintaining temperature in melting device and crucible as high as raw material melting point, also in mono-crystal seeding, forming, annealing and cooling. Before loading into the furnace raw material is preliminary electrified; potential opposite to a sign of charge of raw material is supplied to the melting device; raw material is supplied into the furnace from the external feeder of a centrifugal type. Additionally, raw material of nano dimensions can be supplied to the melting device. Also, it is possible to heat raw material and the melting device with a light-beam heater of non-coherent radiation. The melting device is made in form of a cylinder with a conic end to the side of the crucible. The device rotates and performs vertical reciprocal motions and rotates. A focus beam of light-beam heater scans the melting device.

EFFECT: raised efficiency of process, reduced prime cost of source raw material production, and reduced summary specific mass power expenditures.

5 cl, 3 dwg

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RU 2 418 108 C1

Authors

Tikhonov Viktor Ivanovich

Korobko Aleksandr Nikolaevich

Dates

2011-05-10Published

2009-11-09Filed