METHOD OF MAKING INTERCONNECTIONS FOR SEMICONDUCTOR DEVICE Russian patent published in 2011 - IPC H01L21/28 B82B3/00 

FIELD: physics.

SUBSTANCE: method of making interconnections of a semiconductor device involves formation of a silicon structure in an insulating layer, in which semiconductor devices are formed, contact wells and trenches under future interconnection conductors, successive deposition of an adhesive-wetting layer and a solid catalyst layer at the bottom and wall of the contact wells and trenches, filling the depressions of contact wells and trenches with carbonaceous material through stimulated plasma chemical deposition of the carbon structure from the gas phase on the solid catalyst layer and planarisation of the surface of the silicon structure.

EFFECT: high thermal stability and reduced heating of IC interconnections in conditions of reduction of their cross-sectional area and high current density, low resistivity of the interconnection material compared to carbon nanotubes.

3 cl, 3 dwg