FERROELECTRIC MEMORY CELL AND METHOD OF ITS MANUFACTURING Russian patent published in 2025 - IPC H10B51/30 H10B53/30 

FIELD: electricity.

SUBSTANCE: invention relates to non-volatile memory devices based on ferroelectricity phenomenon. Ferroelectric memory cell includes a silicon substrate, a control transistor, a dielectric layer made between the transistor and the first metal switching level, storage element is a ferroelectric capacitor located in a dielectric layer, including a lower electrode connected by a contact to a drain of the transistor, and the upper electrode, separated by a ferroelectric layer – hafnium-zirconium oxide, additional levels of metal switching, separated by dielectric layers and connected to each other by contacts, wherein the contacts to the lower and upper electrodes of the ferroelectric capacitor are placed outside its active region, and the contact between the drain of the transistor and the lower electrode of the ferroelectric capacitor is formed separately from the contacts to the source and gate of the transistor. Also disclosed is a method of making a ferroelectric memory cell.

EFFECT: high reliability of a ferroelectric memory cell and technological efficiency of its manufacture.

6 cl, 11 dwg