SEMICONDUCTOR FERROMAGNETIC HETERO-STRUCTURE Russian patent published in 2007 - IPC C30B29/10 H01L21/02 H01L21/18 H01L21/203 

FIELD: non-organic chemistry, namely triple compound of manganese-alloyed arsenide of silicon and zinc arranged on monocrystalline silicon substrate, possibly in spintronics devices for injection of electrons with predetermined spin state.

SUBSTANCE: electronic spin is used in spintronics devices as active member for storing and transmitting information, for forming integrated and functional micro-circuits, designing new magneto-optical instruments. Ferromagnetic semiconductor hetero-structure containing zinc, silicon, arsenic and manganese and being triple compound of zinc and silicon arsenide alloyed with manganese in quantity 1 - 6 mass % is synthesized on substrate of monocrystalline silicon and has formula ZnSiAs₂ : Mn/Si. Such hetero-structure is produced by deposition of film of manganese and diarsenide of zinc onto silicon substrate and further heat treatment of it.

EFFECT: possibility for producing perspective product for wide usage due to combining semiconductor and ferromagnetic properties of hetero-structure with Curie temperature significantly exceeding 20°C and due to its compatibility with silicon technique.

3 ex, 2 dwg