METHOD FOR FORMING EPITAXIAL HETEROSTRUCTURES EuO/Ge Russian patent published in 2022 - IPC C30B23/08 C30B23/06 C30B29/16 C23C14/02 C23C14/08 C23C14/18 C23C14/24 C23C14/58 H01F41/30 H01F41/20 B82B3/00 B82Y40/00 

FIELD: manufacturing technology.

SUBSTANCE: invention relates to methods of forming epitaxial EuO/Ge heterostructures, which can be used in spintronic devices. Method of forming epitaxial EuO/Ge heterostructures involves deposition of metal atoms on a germanium substrate in a stream of molecular oxygen by molecular beam epitaxy, wherein surface of Ge(001) substrate is pre-cleaned from natural oxide layer, and surface phases Eu are formed on it, which are sub-monolayer coatings of europium atoms, then at substrate temperature T_S=20÷150 °C, europium is deposited at pressure P_Eu=(0.1÷100)⋅10^-8 Torr of flux of europium atoms (F_Eu) in flow of oxygen F_O2 with relative value 2≤F_Eu/F_O2≤2.2 to formation of EuO film with thickness less than 10 nm.

EFFECT: formation of epitaxial EuO/Ge heterostructures with an atomic-sharp interface without using buffer layers.

1 cl, 5 dwg, 3 ex