METHOD FOR CREATING INTERFACE FOR INTEGRATION OF SINGLE-CRYSTAL EUROPIUM OXIDE WITH GERMANIUM Russian patent published in 2023 - IPC C30B23/08 C30B23/06 C30B29/16 C23C14/02 C23C14/08 C23C14/24 C23C14/54 H01F41/30 H01F41/20 B82B3/00 B82Y40/00 

FIELD: chemical industry.

SUBSTANCE: methods for formation of epitaxial heterostructures, namely, thin films of europium oxide with germanium, which can be used to create devices for germanium nanoelectronics and spintronics, in particular spin-polarization current injectors, spin filters, memory devices, neuromorphic devices. A method for creating an interface for integrating single-crystal europium oxide with germanium involves cleaning the surface of the Ge(001) substrate from the natural oxide layer and forming on it the Eu surface phase, which is a submonolayer periodic structure of Eu atoms, while the Eu surface phase is formed by opening the damper of the Eu cell, which ensures the deposition of Eu atoms at the flow pressure of Eu atoms P_Eu=(0.3÷10)⋅10^-8 Torr per substrate maintained at T_s =410°C, during the time required for the formation of the surface phase, after which the damper of the Eu cell is closed, the substrate temperature is set equal to T_s=20÷200°C, open the molecular oxygen supply valve with a pressure of P_O2=(0.1÷2)⋅10^-8 Torr and keep it open for the time necessary to supply to the surface of the substrate the number of oxygen atoms that differs from the number of Eu atoms in the formed surface phase by 0.8÷1.2 times.

EFFECT: obtaining single-crystal epitaxial films of europium oxide having an atomically sharp interface with Ge, without crystalline inclusions of unwanted orientation.

1 cl, 4 dwg, 4 ex