METHOD OF FORMING A THIN FILM OF EUROPIUM MONOXIDE ON A SILICON SUBSTRATE TO OBTAIN AN EPITAXIAL HETEROSTRUCTURE EUO/SI Russian patent published in 2020 - IPC C23C14/08 C23C14/24 C23C14/58 H01L21/20 

FIELD: technological processes.

SUBSTANCE: invention relates to production of thin films of a ferromagnetic semiconductor europium monoxide (EuO) on a silicon substrate to obtain an epitaxial heterostructure EuO/Si, said thin films can be used in spintronics devices. Surface of Si (001) substrate is pre-cleaned or cleaned and surface phase Eu 2x3 is formed on it. After that deposition is carried out at a temperature of europium substrate Ts=20-150°C at a pressure flow europium atoms (F_Eu) P_Eu=(0.1-100)⋅10^-8 Torr in F_O2 oxygen flow with relative value of 2≤F_Eu/F_O2≤2.2 to form EuO film with thickness of less than 20 nm. In a particular embodiment, after forming an EuO film with thickness of less than 20 nm, subsequent deposition of europium in an oxygen flow with a relative value of 2≤F_Eu/F_O2≤6 at substrate high temperature T_s=400-490°C to achieve required thickness of film EuO and/or annealing formed film EuO to substrate temperature T_s≤520°C.

EFFECT: generation of epitaxial films of a ferromagnetic semiconductor EuO on Si(001) substrates with an atomic-sharp interface without a buffer layer using molecular-beam epitaxy.

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