METHOD FOR CONTROL OF DEFECTIVENESS AND RESILIENT DEFORMATION IN SEMICONDUCTOR HETEROSTRUCTURES LAYERS Russian patent published in 2011 - IPC G01N23/20 

FIELD: physics.

SUBSTANCE: with the help of c X-ray diffractometry using a grazing primary X-ray flux one obtains an asymmetric reflection from crystallographic planes forming the largest angle with the substrate - epitaxial layer interface surface and determines deformation in epitaxial layers by change of the distance between the diffraction maximums from the epitaxial layer and the subsrtrate; one applies single-chip X-ray diffractometry with a quasiparallel X-ray flux with the flux total divergence and convergence = 12'-24'; the maximum reflection is obtained by way of the heterostructure azimuth turn round a normal to the heterostructure surface; the angle of the X-ray flux drop onto the surface is within the range of 2.5-9°; then one proceeds with the Bragg angle correction by way of changing the angle of the primary X-ray flux drop onto the crystallographic plane coinciding with the heterostructure surface until obtainment of the maximum reflection; using the system of crystallographic planes of epitaxial layers growth one obtains a simultaneous reflection from similar systems of crystallographic planes of growing epitaxial layers and the substrate, among other things, recording existence of an intermediate layer between them.

EFFECT: extension of the array of tasks solved during heterostructures study.

3 cl, 3 dwg