METAL-BASE TRANSISTOR Russian patent published in 2016 - IPC H01L29/00 

FIELD: electricity.

SUBSTANCE: invention can be used for amplification, generation and conversion of electric signals. Invention presupposes that a transistor with a metal base containing an emitter, a base of the material with metal conductivity and a collector; at that, between the emitter and the base there is formed a Schottky barrier, the emitter is made of a semiconductor material with n⁺-type conductivity, the collector is made of a material with n-type conductivity, while between the base and the collector there is located a thin buffer layer of a material with p-type conductivity and between the base and the buffer layer there is formed an ohmic contact and between the buffer layer and the collector - a p-n-junction.

EFFECT: ensuring of a possibility to increase the static transfer ratio of the emitter current in a circuit with a common base.

1 cl, 1 dwg