SHF POWER AMPLIFIER Russian patent published in 2011 - IPC H03F3/60 

FIELD: electricity.

SUBSTANCE: amplifier comprises two rectangular waveguides, one - for an input, the other - for an output which are galvanically connected by one of narrow walls and short-circuited on one end of the wave guide; one of wide walls of each waveguide comprises at least, two resonant slots symmetrical to a galvanic connection plane and parallel to the narrow walls of the waveguide; central lines of the resonant slots are at the distance equal to a half wave length in the waveguide; the distance between short-circuited ends of the waveguide to the nearest slot is equal to a quarter wave length; on a surface of one of wide walls of each waveguide from the slots, there are integrated circuits some of which comprises segments of microstrip lines, the others - amplifiers on a field transistor with a Schottky barrier which are connected with the segments of microstrip lines by conductors. The specified integrated circuits and their connections represent a monolithic integrated circuit on a semiconductor substrate with amplifiers on the field transistor with the Schottky barrier being multicascade, and the opposite ends of waveguides being short-circuited.

EFFECT: improved operational reliability, higher output power, decreased input and output reflection ratios of the power amplifier.

4 dwg