FIELD: chemistry.
SUBSTANCE: invention can be used in electronics industry and fibre optics. Sodium hexafluorosilicate is first heated to 420-480°C and all released gases are pumped out at said temperature for not less than 7 hours. Sodium hexafluorosilicate is then thermally decomposed at temperature higher than 550°C with simultaneous condensation of silicon tetrafluoride. Uncondensed gas phase is removed by evacuation.
EFFECT: invention enables to obtain silicon tetrafluoride with output of 95% and C1-C4 hydrocarbon impurities of not more than 2*10-5 mol %, and 7*10-1 mol % hexaflurodisiloxane.
1 tbl, 1 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PRODUCING SILICON TETRAFLUORIDE | 2001 |
|
RU2182558C1 |
| SILICON TETRAFLUORIDE SYNTHESIS METHOD | 2009 |
|
RU2399583C1 |
| METHOD FOR SYNTHESIS OF HIGHLY PURE SILANE (VERSIONS) | 2008 |
|
RU2388692C2 |
| METHOD OF PRODUCING SILICON TETRAFLUORIDE AND APPARATUS FOR REALISING SAID METHOD | 2010 |
|
RU2454366C2 |
| PRODUCTION OF SILICON AND ITS COMPOUNDS AND PRODUCTION LINE TO THIS END | 2012 |
|
RU2525415C1 |
| METHOD FOR PREPARING HIGH-PURITY ISOTOPE-ENRICHED SILANE | 2003 |
|
RU2226501C1 |
| METHOD OF PREPARING HIGH-PURITY SILICON POWDER FROM SILICON PERFLUORIDE WITH SIMULTANEOUS PREPARATION OF ELEMENTARY FLUORINE, METHOD OF SEPARATING SILICON FROM SALT MELT, SILICON POWDER AND ELEMENTARY FLUORINE OBTAINED BY INDICATED METHOD, AND SILICON TETRAFLUORIDE PREPARATION PROCESS | 2004 |
|
RU2272785C1 |
| METHOD OF PRODUCING SILANE | 2012 |
|
RU2492141C1 |
| METHOD OF DISPOSING PRODUCTION WASTE CONTAINING FLUOROSILICATES | 2016 |
|
RU2641819C2 |
| METHOD OF PREPARING MONOSILANE | 1995 |
|
RU2077483C1 |
