FIELD: chemistry.
SUBSTANCE: invention relates to a technique of producing monosilane used in production of poly- and monocrystalline silicon of the SG and EG classes, as well as semiconductor structures via vapour phase epitaxy. In the method of producing monosilane, involving reaction of silicon tetrafluoride with calcium hydride at high temperature, purifying monosilane by sorption and fractionation, the reaction of silicon tetrafluoride with calcium hydride takes place decomposing a mixture of calcium hexafluorosilicate with calcium hydride at temperature 380-400°C and weight ratio 2.5:1. Monosilane is purified by chemisorption on synthetic fluorite obtained from decomposition of calcium hexafluorosilicate, and calcium hexafluorosilicate from the chemisorption step is decomposed to synthetic fluorite and silicon tetrafluoride, which is returned to the monosilane production step.
EFFECT: obtaining monosilane via a hydride-fluoride technique using calcium hexafluorosilicate as silicon tetrafluoride.
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