SEMICONDUCTOR LIGHT-EMITTING INSTRUMENT AND METHOD FOR ITS MANUFACTURING Russian patent published in 2011 - IPC H01L33/20 

FIELD: electricity.

SUBSTANCE: semiconducting light-emitting instrument 1 comprises an n-electrode 50, arranged on a light-releasing surface on the side opposite to the surface of a semiconductor foot 40, which is installed on a substrate 10. Multiple bulges are arranged in the area of 80 first bulges and in the area of 90 second bulges on the light-releasing surface. The area of 90 second bulges adjoins the interface between the n-electrode 50 and the semiconductor foot 40, between the area of 80 first bulges and the n-electrode 50. The base of the first bulge made in the area of 80 first bulges is located closer to the light-emitting layer 42 than to the interface between the n-electrode 50 and the semiconductor foot 40, and the base of the second bulge arranged in the area of 90 second bulges is located closer to the interface between the n-electrode 50 and the semiconductor foot 40, than to the base of the first bulge.

EFFECT: invention provides for the possibility to produce a semiconductor light-emitting instrument, which has high reliability and superb light distribution.

20 cl, 13 dwg