FIELD: physics.
SUBSTANCE: semiconductor light-emitting device has a semiconductor structure having a light-emitting layer between an n-type region and a p-type region; a reflecting metal contact on the lower side of the semiconductor structure and electrically connected to the p-type region; a material between at least a portion of the reflecting metal contact and the p-type region. The difference between the refraction index of the material and the refraction index of the p-type region is at least equal to 0.4; wherein at least a portion of the upper side of the semiconductor structure is textured; the distance between the textured portion of the upper side of the semiconductor structure and the reflecting metal contact is shorter than 5 mcm; the semiconductor structure includes cavity resonators filled with metal, the cavity resonators direct first light, incident at a first angle of incidence, towards second light incident at a second angle of incidence, the second angle of incidence being less than the first angle of incidence; a first set of cavity resonators contains metal which is in contact with the reflecting metal contact and has side walls which are completely coated with a dielectric material for insulating the first set of cavity resonators from the n-type region; and a second set of cavity resonators has side walls which are partially coated with a dielectric material such that the metal is in contact with the n-type region and insulated from the p-type region and the reflecting metal contact. A second version of the semiconductor light-emitting device is also disclosed.
EFFECT: disclosed devices can increase output of light emitted at sliding angles of incidence.
15 cl, 15 dwg
