METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERTER BASED ON GaInAsSb Russian patent published in 2024 - IPC H01L31/101 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to methods for manufacturing semiconductor devices based on A_IIIB_V compounds capable of effectively converting high-density incident radiation. A method for manufacturing a photoelectric converter based on GaInAsSb involves deposition on an n-GaSb substrate in an isothermal liquid-phase epitaxy mode of n-GaInAsSb and p-GaSb layers with thicknesses of 2-5 mcm and no more than 0.5 mcm, respectively. Formation of the emitter layer p-Ga_xIn_1-xAs_ySb_1-y with acceptor impurity concentration of (1-5)⋅10¹⁹at/cm³ and a thickness of 0.20-0.35 mcm is carried out by local diffusion of zinc from the gas phase through a protective dielectric mask along the perimeter of the photoelectric converter with simultaneous doping of the wide-gap GaSb window to an acceptor impurity concentration of 1⋅10¹⁹-3⋅10²⁰ at/cm³, as well as a post-growth reduction in the thickness of the wide-gap window to 0.1-0.2 mcm on the photosensitive surface by selective anodic oxidation through a photoresist mask while maintaining the thickness of the subcontact areas. The composition Ga_xIn_1-xAs_ySb_1-y, covering the range x=0.8-0.99, y=0.18-0.01, is determined by the wavelength of the incident infrared radiation.

EFFECT: improving the performance characteristics of the photoelectric converter and reducing the level of leaks.

1 cl, 5 dwg