METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERTERS BASED ON MULTILAYER STRUCTURE Russian patent published in 2022 - IPC H01L31/18 

FIELD: photosensitive elements manufacturing.

SUBSTANCE: invention relates to the technology of manufacturing photosensitive elements based on semiconductor heterostructures and can be used to create IR photodetectors for the spectral range of 1.5-3.8 mcm. The method for manufacturing photovoltaic converters includes manufacturing a multilayer semiconductor heterostructure, InAs/InAsSb/InAsSbP, applying a photoresist mask to the front surface of the semiconductor heterostructure, preparing the surface for forming ohmic contacts, vacuum deposition of ohmic contacts, and forming at least one mesa structure and a separating grid. Chemical etching of the subcontact area, the side surface of the mesa structure, and the dividing grid is carried out in an etchant containing hydrobromic acid (HBr), potassium permanganate (KMnO₄) and water according to the proposed ratio of components.

EFFECT: invention provides simplification of the manufacturing process of photoelectric converters, creation of a smooth side surface of a photosensitive mesa structure with high accuracy and reproducibility of the depth of the etched relief.

1 cl, 2 dwg