METHOD OF MAKING OHMIC CONTACTS OF PHOTOELECTRIC CONVERTER Russian patent published in 2019 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: method of making ohmic contacts of a photoelectric converter includes sputtering on heterostructure A³B⁵ base of frontal ohmic contact through first photoresistive mask with pattern of frontal ohmic contact and base of dormal ohmic contact, heat treatment of obtained structure, formation of frontal ohmic contact through second photoresistive mask and rear ohmic contact by electrochemical gold deposition in pulsed mode at pulse signal frequency of 30–200 Hz, duty cycle 0.2–0.5 first at current density 0.002–0.005 mA/mm² for 1–2 minutes, and then at current density of 0.02–0.05 mA/mm² to preset thickness. A frontal ohmic contact is formed through a second photoresistive mask with a frontal ohmic contact which is narrowed by 0.5–1 mcm.

EFFECT: invention allows improving photoelectric parameters of photoelectric converter due to reduction of ohmic losses.

1 cl, 4 dwg, 3 ex