FUNCTIONALLY COMPLETE TOLERANT ELEMENT Russian patent published in 2011 - IPC H03K19/94 H03K19/03 

FIELD: information technology.

SUBSTANCE: device has 4 CMIS transistors with n-conductivity type and 4 CMIS transistors with p-conductivity type which are connected between a power bus and a neutral bus, to the gates of which input signals are transmitted. In the end, a reference logic function in the sense of Post theorem, is formed at the output of the element.

EFFECT: high reliability of the element in case of transistor failure due to tolerance to single constant failure of inputs of the element or transistor.

2 dwg