THE METHOD OF PRODUCTION OF DEVICES WITH THIN FILM SUPERCONDUCTING JUNCTIONS Russian patent published in 2012 - IPC H01L39/24 

FIELD: microelectronics.

SUBSTANCE: invention relates to superconducting microelectronics in particular to production of superconducting tunnel junctions, Josephson junctions, superconductor-isolator-superconductor type structures (SIS), superconductor-isolator-normal metal (SIN), bolometers on frigorific electrons; the essence of the invention is as follows: the method of production of installment with thin film superconducting junctions consisting of coating of the supportive and main layers of the resist; the exposition for the above resist layers to be developed, sputtering of the first layer of the normal metal or the superconductor square to the body; the oxidation for forming the tunnel barrier; coating of the second film layer of the superconductor angularly to the normal: blasting of the resist; coating of the upper film of the superconductor is performed at two different angles +φ и -φ, from different side of the normal to the effect that the two films of the superconductor overlap the requisite gapping and form the single super conducting layer; the tunnel contact is established between the normal metal and the super conductor, at that the coating angle is chosen according to the formula tgφ≤t/(L+w), wherein t=t₁+t₂ is the total thickness of the double-layer resist, w is the width of the bottom electrode, L is the depth of the etch.

EFFECT: increase of the tunnel junction space, uplift of the restrictions for the type of junctions, removal of the parasitic shadows, shunt capacitances, leakage impedance, and decrease of the technological stages of electronic lithography.

3 cl, 7 dwg