METHOD OF MAKING DEVICES WITH THIN-FILM TUNNEL JUNCTIONS Russian patent published in 2020 - IPC H01L39/24 

FIELD: manufacturing technology.

SUBSTANCE: method of making devices with thin-film superconducting junctions involves applying two layers of resist of different sensitivity, exposure in an electronic lithograph, developing these resist layers, spraying the first layer of the normal metal or the superconductor at an angle to the substrate, oxidising to form a tunnel barrier, spraying the second layer of the superconductor film or the normal metal at the same angle to the normal, removal (explosion) of resist, sputtering of lower (first) film is made in first groove in resist at an angle to normal, and upper (second) film is sputtered in second groove from orthogonal direction after rotation of substrate by 90 degrees at same angle to normal, and inclination angle is selected depending on width of groove and thickness of upper resist.

EFFECT: invention enables to produce tunnel junctions with an area of less than 0,1 mcm² and dimensional accuracy, high reliability and reproducibility, improved electrical conductivity and thermal conductivity of the lead-in conductors, wider exposure dose range with the electronic lithograph from 20 % to 50 % by excluding the pendant bridge from the resistor from the process chain and forming deep grooves in the double-layer resist to implement independent sputtering from different directions.

3 cl, 8 dwg