SOLID-STATE IMAGE CAPTURING DEVICE Russian patent published in 2013 - IPC H01L27/146 

FIELD: physics.

SUBSTANCE: in a solid-state image capturing device, a photoelectric conversion portion, a change retention portion, a transfer portion and a reading unit are formed in a p-type pocket. The charge retention portion is configured to include an n-type semiconductor region which is a first semiconductor region which holds charges in a portion different from the photoelectric conversion portion. A p-type semiconductor region, having a higher concentration than the p-type pocket, is situated under the n-type semiconductor region.

EFFECT: enabling charge transfer at low voltage, first by preventing expansion of the depletion layer during transfer of charges from the charge retention portion to a floating diffusion region and, secondly, by preventing narrowing of the transfer channel between the charge retention portion and the floating diffusion region.

33 cl, 13 dwg