FIELD: chemistry.
SUBSTANCE: solid-state imaging device comprises first semiconductor region of first conductivity type, provided on substrate by epitaxial growth, second semiconductor region of first conductivity type, provided on first semiconductor region, and third semiconductor region of second conductivity type, provided in second semiconductor region to form p-n-junction with second semiconductor region, wherein first semiconductor region is formed so that concentration of impurities decreases from side of substrate to side of third semiconductor area and distribution of concentration of impurities in second semiconductor region is formed by ion implantation.
EFFECT: higher efficiency of transferring charges generated by photoelectric conversion.
25 cl, 6 dwg
