FIELD: physics.
SUBSTANCE: disclosed is an image sensor, which includes a first semiconductor region of a first conductivity type, which is situated in a substrate, and a second semiconductor region of a second conductivity type, which is situated in the first semiconductor region to form a charge accumulation region. The second semiconductor region includes a plurality of portions arranged in a direction along the surface of the substrate. A potential barrier is formed between the plurality of portions. The second semiconductor region is wholly depleted through expansion of a depletion region from the first semiconductor region to the second semiconductor region. A final depletion portion intended for final depletion of the second semiconductor region is depleted through the expansion of the depletion region from a portion of the first semiconductor region, located in a lateral direction of the final depletion portion.
EFFECT: invention provides a solid-state image sensor, which is simple to make and has a design which is efficient in terms of increasing the quantitative measure of charge saturation and a camera which includes such a sensor.
16 cl, 12 dwg
