METHOD OF SILICON NITRIDE PRECIPITATION ON SILICON SUBSTRATE Russian patent published in 2014 - IPC H01L21/318 

FIELD: chemistry.

SUBSTANCE: method of silicon nitride precipitation on silicon substrate includes preliminary processing of silicon substrate surface in nitrogen plasma, preparation of gas mixture components of 5.2% mixture of monosilane with argon with consumption of 1.05÷1.15 l/h and nitrogen with consumption 0.07÷0.08 l/h, of which silicon nitride film is formed, precipitation of silicon nitride film on processed surface of silicon substrate directly without reactor depressurisation after preliminary processing of silicon substrate surface in nitrogen plasma.

EFFECT: increased quality of precipitated films of silicon nitride by method of plasma-activated process of chemical precipitation from gas phase on silicon substrates by preliminary processing of substrate surface in nitrogen plasma, which results in increase of homogeneity of film precipitation on substrate, reduction of number of defects in film, improvement of its optic and dielectric properties.

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