FIELD: electricity.
SUBSTANCE: method for formation of dielectric layer with conductivity switching effect consists in application of composite material representing silicon-based dielectric array with inclusions of clusters. Such material structure permits to provide conductivity switching effect. Application is executed by deposition of siliceous material representing mixture of silane with oxygen- and/or nitrogen-containing gases in low-frequency glow discharge plasma at the frequency of 3-200 kHz.
EFFECT: obtaining dielectric layers with conductivity switching effect which are fully compatible with materials as well as most of manufacturing impacts used in conventional silicon technology of integrated circuits.
3 dwg
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