FIELD: electricity.
SUBSTANCE: invention is related to the area of micro- and nanoelectronics, and namely to structure of dielectric layer for MIS structures having conductivity switching effect. Peculiarity of the suggested structure consists in formation of 1-5 layers of silicon-based material with thickness of 1-5nm inside the main dielectric film - large-gap semiconductor of oxide and/or silicone nitride or their alloys with carbon or germanium, with built-in nanosize silicon clusters; and the above material differs in chemical composition and less width of forbidden gap from material of the main layer.
EFFECT: manufacturing silicon-based dielectric layers for MIS structures having conductivity switching effect, which allows manufacturing MIS structures off small area with increased yield of good structures.
2 dwg
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