METHOD FOR PRODUCING SILICON NANOSTRUCTURES Russian patent published in 2002 - IPC

FIELD: electronic engineering; production of nanostructures by means of charged-particle current. SUBSTANCE: method for producing nanostructures designed for data signal transmission, conversion, storage, or generation involves irradiation of silicon-containing material with charged-particle current. Novelty is that surface of silicon-containing material is pre-covered with metal coating and irradiated by accelerated heavy ions, ion irradiation time being found from equation J x t = Nm l/sq. cm, where j is desired density of ion current, l/sq. cm x s; t is ion irradiation time of layer, s; N is desired density of silicon nanostructures, l/sq. cm. Metal coating may be applied in the form of solid film or sections of desired geometry such as threads. EFFECT: ability of producing local silicon areas measuring a few nm irrespective of silicon-containing layer thickness. 11 cl, 2 dwg