FIELD: nanotechnology.
SUBSTANCE: invention relates to the field of micro-and nanoelectronics. The method of manufacturing a dielectric layer of MIS structures having the effect of switching is application of the nanocomposite film of silicon oxynitride with the incorporated silicon clusters. Application is carried out by the method of plasma sputtering of the silicon target at a deposition rate of 5-7 nm/min in argon medium with additives of 3-5 vol% oxygen and 6-8 vol% nitrogen.
EFFECT: obtaining dielectric layers having the effect of conductivity switching, fully compatible with the materials, as well as with most technological influences used in traditional silicon technology of integrated circuits.
2 cl, 3 dwg
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