MICROWAVE INTEGRATED CIRCUIT Russian patent published in 2022 - IPC H01L27/12 

FIELD: electronic technology.

SUBSTANCE: invention can be widely used in microwave electronic technology, in particular in radar stations with active phased array antennas (APAA). The microwave integrated circuit contains a dielectric substrate, a metallization coating is made on the front and back sides, while the local coating is on the front side, passive elements, transmission lines, terminals, at least one active element crystal, contact pads of the active element crystal are located on the front side of the substrate, at least one active element crystal is made in the substrate, at least one through hole is made in the substrate, the elements of the integrated circuit are made and connected electrically according to its specified topology and electrical circuit, while the substrate is made of silicon carbide, the metallization coating on the reverse side of the substrate is solid, the through hole is metallized, a conductive layer containing tin and gold is made on the contact pads of the active element crystal, through which the front side of the active element crystal is connected to the contact pads of the active element crystal.

EFFECT: invention provides an increase in the gain, output power and operating frequency level while maintaining high integration of elements and reliability.

6 cl, 5 dwg, 1 tbl