FIELD: electricity.
SUBSTANCE: method for mask creation at resist surface includes application on substrate surface of polymer resist layer containing acid generator, resist exposure, heat treatment of exposed resist and further development of structure created in resist. Heat treatment of exposed resist includes its heating by at least one laser pulse which pulse width is selected so that factor of laser radiation absorption by resist should exceed factor of laser radiation absorption by substrate.
EFFECT: improvement of lithography resolution with higher efficiency using chemical highlight technology.
5 cl
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