FIELD: physics.
SUBSTANCE: layer of resist is applied, which is chosen as a low-molecular-weight polystyrene, onto the substrate by the method of thermal vacuum deposition, while the temperature of the substrate during the deposition is not more than 30°C; a latent image is formed on the substrate by local exposure of a high-energy electron beam with a light dose of 2000-20000 mcC/cm2; a resist is developed, when the substrate is heated in a vacuum to the temperature of 600-800 K and at the pressure of not more than 10-1 mbar and plasma etching to transfer the pattern of the resist mask to the substrate to form the micro- and nanostructure on the substrate.
EFFECT: providing the possibility of increasing the resolution of the finished structure of nanostructure formation on surfaces of uneven complex shapes, and creating very thin resist films.
8 cl, 6 dwg
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