FIELD: physics.
SUBSTANCE: copper and titanium ions are implanted into quartz glass with radiation dose of 5×1015 - 2×1017 cm2 and current density of 10 mcA/cm2, followed by thermal treatment of the luminophore in an air atmosphere at temperature 750-900°C for 1-2 hours. Copper ions are implanted at ion energy of 35-40 keV and titanium ions are implanted at ion energy of 40-45 keV. After thermal treatment, the luminophore is treated with UV radiation with wavelength 240-260 nm. The UV source used can be a 100-200 W ultra-high pressure mercury lamp with luminous efficacy of 30-40 lm/W, a 400 W low-pressure deuterium lamp or a 300 W KrF excimer laser with wavelength 248 nm.
EFFECT: high stability of luminescence spectrum and possibility of controlling said spectrum.
1 tbl, 1 dwg, 6 ex
Title | Year | Author | Number |
---|---|---|---|
METHOD OF PRODUCING NANOCOMPOSITE LUMINOPHOR IN FORM OF QUARTZ GLASS CONTAINING COPPER NANOCLUSTERS | 2010 |
|
RU2443748C1 |
METHOD OF PRODUCING DOPED QUARTZ GLASS WITH TETRAHEDRAL COORDINATION OF TITANIUM ATOMS | 2011 |
|
RU2461665C1 |
METHOD FOR PRODUCING SILICA GLASS IMPLANTED WITH ZINC IONS | 2014 |
|
RU2568456C1 |
ZINC ION-IMPLANTED QUARTZ GLASS | 2014 |
|
RU2585009C1 |
METHOD OF PRODUCING PHOSPHOR IN FORM OF AMORPHOUS FILM OF SILICON DIOXIDE WITH SELENIUM IONS ON SILICON SUBSTRATE | 2012 |
|
RU2504600C1 |
METHOD OF PRODUCING QUARTZ GLASS IMPLANTED WITH TIN IONS | 2011 |
|
RU2486282C1 |
TIN ION-IMPLANTED SILICON OXIDE FILM ON SILICON SUBSTRATE | 2013 |
|
RU2535244C1 |
DOPED QUARTZ GLASS WITH TETRAHEDRAL COORDINATION OF TITANIUM ATOMS | 2011 |
|
RU2477711C1 |
METHOD OF OBTAINING CONVERTER OF VACUUM ULTRAVIOLET RADIATION INTO VISIBLE RANGE RADIATION IN FORM OF AMORPHOUS SILICON OXIDE SiO FILM ON SILICON SUBSTRATE | 2013 |
|
RU2534173C2 |
MATERIAL FOR CONVERSION OF VACUUM ULTRAVIOLET RADIATION INTO VISIBLE RANGE RADIATION IN FORM OF AMORPHOUS FILM OF SILICON OXIDE SiOS ON SILICON SUBSTRATE | 2014 |
|
RU2584205C2 |
Authors
Dates
2012-06-20—Published
2010-09-07—Filed