FIELD: chemistry.
SUBSTANCE: method involves implanting selenium ions with ion energy of 300±30 keV with fluence of 4-6-1016 ions/cm2 into said film and first annealing at temperature of 900-1000°C for 1-1.5 hours in an atmosphere of dry nitrogen. The film is further annealed at temperature of 500-650°C for 1.5-2.5 hours in an air atmosphere.
EFFECT: high stability of the photoluminescence spectrum of the phosphor having luminescent radiation in the visible region.
1 dwg, 1 tbl, 3 ex
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