FIELD: metallurgy.
SUBSTANCE: proposed method comprises implanting titanium ions in quartz glass in pulse mode with radiation dose of (1-9)·1016 cm-2 at titanium ion energy of 25-35 keV, ion current pulse density of 0.2-10 mA/cm2 and quartz glass temperature of 250-300°C under isothermal conditions.
EFFECT: simplified process to assist in fabricating functional micro and nano devices.
1 dwg, 1 tbl, 5 ex
| Title | Year | Author | Number | 
|---|---|---|---|
| DOPED QUARTZ GLASS WITH TETRAHEDRAL COORDINATION OF TITANIUM ATOMS | 2011 | 
 | RU2477711C1 | 
| METHOD OF PRODUCING NANOCOMPOSITE LUMINOPHORE IN FORM OF QUARTZ GLASS CONTAINING COPPER AND TITANIUM NANOCLUSTERS | 2010 | 
 | RU2453577C2 | 
| METHOD OF PRODUCING NANOCOMPOSITE LUMINOPHOR IN FORM OF QUARTZ GLASS CONTAINING COPPER NANOCLUSTERS | 2010 | 
 | RU2443748C1 | 
| METHOD OF PRODUCING QUARTZ GLASS IMPLANTED WITH TIN IONS | 2011 | 
 | RU2486282C1 | 
| METHOD FOR PRODUCING SILICA GLASS IMPLANTED WITH ZINC IONS | 2014 | 
 | RU2568456C1 | 
| ZINC ION-IMPLANTED QUARTZ GLASS | 2014 | 
 | RU2585009C1 | 
| METHOD OF MAKING DIFFRACTION GRATING | 2013 | 
 | RU2544873C1 | 
| DIFFRACTION GRATING | 2013 | 
 | RU2541495C1 | 
| METHOD FOR PRODUCING STRUCTURES WITH BURIED METAL LAYER | 1992 | 
 | RU2045795C1 | 
| METHOD FOR PRODUCING PERFECT EPITAXIAL SILICON LAYERS WITH BURIED n- LAYERS | 2003 | 
 | RU2265912C2 | 
Authors
Dates
2012-09-20—Published
2011-08-12—Filed