FIELD: physics.
SUBSTANCE: copper ions are implanted into quartz glass with radiation dose of 5·1015-2·1017 cm-2 and ion energy of 35-45 keV. The luminophor is then thermally treated in an air atmosphere at temperature 750-900°C for 1-2 hours, followed by treatment with ultraviolet radiation in the 240-260 nm wavelength range. The ultraviolet radiation source used can be an ultra-high pressure mercury lamp, a deuterium low-pressure lamp or a KrF excimer laser. Curve 1 shows the luminescence spectrum of a luminophor treated with a KrF excimer lamp, while curve 2 shows the luminescence spectrum of a luminophor treated with a low-pressure deuterium lamp and curve 3 shows the luminescence spectrum of a thermally treated luminophor without treatment with ultraviolet radiation.
EFFECT: high luminescence intensity and possibility of controlling the luminescence spectrum.
1 dwg, 1 tbl, 6 ex
| Title | Year | Author | Number | 
|---|---|---|---|
| METHOD OF PRODUCING NANOCOMPOSITE LUMINOPHORE IN FORM OF QUARTZ GLASS CONTAINING COPPER AND TITANIUM NANOCLUSTERS | 2010 | 
 | RU2453577C2 | 
| METHOD OF PRODUCING DOPED QUARTZ GLASS WITH TETRAHEDRAL COORDINATION OF TITANIUM ATOMS | 2011 | 
 | RU2461665C1 | 
| ZINC ION-IMPLANTED QUARTZ GLASS | 2014 | 
 | RU2585009C1 | 
| METHOD FOR PRODUCING SILICA GLASS IMPLANTED WITH ZINC IONS | 2014 | 
 | RU2568456C1 | 
| METHOD OF PRODUCING PHOSPHOR IN FORM OF AMORPHOUS FILM OF SILICON DIOXIDE WITH SELENIUM IONS ON SILICON SUBSTRATE | 2012 | 
 | RU2504600C1 | 
| BIOCHIP SUBSTRATE AND METHOD OF ITS FABRICATION | 2009 | 
 | RU2411180C1 | 
| METHOD OF PRODUCING QUARTZ GLASS IMPLANTED WITH TIN IONS | 2011 | 
 | RU2486282C1 | 
| METHOD OF FORMING METAL NANOCLUSTERS IN GLASS | 2008 | 
 | RU2394001C1 | 
| TIN ION-IMPLANTED SILICON OXIDE FILM ON SILICON SUBSTRATE | 2013 | 
 | RU2535244C1 | 
| METHOD OF RECORDING OPTICAL INFORMATION IN GLASS | 2017 | 
 | RU2674402C1 | 
Authors
Dates
2012-02-27—Published
2010-09-07—Filed