FIELD: chemistry.
SUBSTANCE: tin ion-implanted silicon oxide film on a silicon substrate includes alpha-tin nanoclusters. The film has thickness of 80-350 nm, average tin concentration in the range of 2.16 to 7.1 at % and the alpha-tin nanoclusters have a radius of 1.5 to 4 nm.
EFFECT: film has higher intensity and a short photoluminescence bandwidth.
2 dwg, 1 tbl, 5 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PRODUCING QUARTZ GLASS IMPLANTED WITH TIN IONS | 2011 |
|
RU2486282C1 |
| MATERIAL FOR CONVERSION OF VACUUM ULTRAVIOLET RADIATION INTO VISIBLE RANGE RADIATION IN FORM OF AMORPHOUS FILM OF SILICON OXIDE SiOS ON SILICON SUBSTRATE | 2014 |
|
RU2584205C2 |
| METHOD OF OBTAINING CONVERTER OF VACUUM ULTRAVIOLET RADIATION INTO VISIBLE RANGE RADIATION IN FORM OF AMORPHOUS SILICON OXIDE SiO FILM ON SILICON SUBSTRATE | 2013 |
|
RU2534173C2 |
| CONVERTER OF VACUUM ULTRAVIOLET RADIATION INTO RADIATION OF VISIBLE RANGE IN FORM OF AMORPHOUS SILICON OXIDE SiO FILM ON SILICON SUBSTRATE | 2013 |
|
RU2526344C1 |
| METHOD OF PRODUCING PHOSPHOR IN FORM OF AMORPHOUS FILM OF SILICON DIOXIDE WITH SELENIUM IONS ON SILICON SUBSTRATE | 2012 |
|
RU2504600C1 |
| METHOD FOR PRODUCING SILICA GLASS IMPLANTED WITH ZINC IONS | 2014 |
|
RU2568456C1 |
| ZINC ION-IMPLANTED QUARTZ GLASS | 2014 |
|
RU2585009C1 |
| METHOD OF PRODUCING NANOCOMPOSITE LUMINOPHOR IN FORM OF QUARTZ GLASS CONTAINING COPPER NANOCLUSTERS | 2010 |
|
RU2443748C1 |
| METHOD OF PRODUCING NANOCOMPOSITE LUMINOPHORE IN FORM OF QUARTZ GLASS CONTAINING COPPER AND TITANIUM NANOCLUSTERS | 2010 |
|
RU2453577C2 |
| PRODUCTION OF POROUS SILICON WITH STABLE PHOTO LUMINESCENCE | 2014 |
|
RU2568954C1 |
