FIELD: chemistry.
SUBSTANCE: invention relates to a technique of producing xenon difluoride used in micro- and nanoelectronics, medicine and biology. The method of producing xenon difluoride is realised by reacting xenon and fluorine in a reaction vessel. Fluorine is fed into the pre-evacuated vessel at pressure 10 atm and xenon is fed until achieving total pressure of 20-21 atm and then held for not less than 15 minutes until complete mixture. Further, the combustion initiator is heated by a current pulse to 600-650°C and xenon undergoes combustion in fluorine to obtain the end product. The combustion initiator is a spiral of nickel wire or a plate made from nickel foil.
EFFECT: method increases efficiency of the process of producing xenon difluoride and obtain an end product with 98-99% content.
4 ex
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Authors
Dates
2012-07-10—Published
2010-12-23—Filed