METHOD OF MEASUREMENT OF HEAT RESISTANCE OF CMOS OF DIGITAL INTEGRATED CHIPS Russian patent published in 2015 - IPC G01R31/28 

Abstract RU 2561337 C1

FIELD: instrumentation.

SUBSTANCE: method comprises supply of voltage to the tested chip, switching of a logical state of a heating logical element by sequence of periodic impulses, measurement of change of the temperature sensitive parameter, determination of heat resistance, note that the heating logical element is switched by highly sensitive impulses, and the temperature sensitive parameter is the period of sequence of the low-frequency impulses generated by the multivibrator, and the multivibrator consists of a logical element of the tested chip and the logical element of the reference chip operated together with passive elements of the multivibrator at constant temperature.

EFFECT: possibility of shortening time of measurement and error of measurement of temperature sensitive parameter.

2 dwg

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RU 2 561 337 C1

Authors

Judin Viktor Vasil'Evich

Sergeev Vjacheslav Andreevich

Teten'Kin Jaroslav Gennad'Evich

Shorin Anton Mikhajlovich

Silin Aleksandr Nikolaevich

Dates

2015-08-27Published

2014-03-14Filed