SUBSTRATE REMOVAL DURING LIGHT-EMITTING DIODE FORMATION Russian patent published in 2012 - IPC H01L33/54 

FIELD: physics.

SUBSTANCE: method of fabricating a light emitting diode (LED) structure involves forming LED layers including an n-type layer, an active layer, and a p-type layer over a growth substrate; forming metal contacts on a bottom surface of the LED layers, the bottom surface of the LED layers being a surface opposite the surface of the growth substrate; providing a submount, having metal contacts on the top surface; depositing an underfill layer on the bottom surface of the LED layers; after depositing the underfill layer, separating the growth substrate from the LED layers; and after removing the growth substrate, mounting the LED layers to the submount using metal contacts on the bottom surface of the LED layers which are in contact with the metal contacts on the top surface of the submount, wherein the underfill layer is between the bottom surface of the LED layers and the top surface of the submount.

EFFECT: invention provides a more uniform and void free support, provides a support with more closely matched thermal expansion behaviour, provides a support with high temperature operability, not limited by the glass transition point of organic materials and provides a support with improved thermal conductivity for superior heat sinking.

14 cl, 8 dwg