FIELD: electricity.
SUBSTANCE: according to the invention a semiconductor light-emitting device comprises a multilayer substrate, which contains a base; and a seed bed coupled to the base; and a semiconductor structure grown on top of the seed bed, at that the semiconductor structure comprises a light-emitting layer placed between the area of an n-type and the area of a p-type; at that the variation of a refraction index in the direction perpendicular to the growth of the semiconductor structure is placed between the base and the light-emitting layer. The method of manufacturing the light-emitting device is also proposed.
EFFECT: invention ensures improving the performance of the light-emitting device.
15 cl, 16 dwg
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