METAL FILLER, SEPARATING p- AND n-TYPE LAYERS, FOR LIGHT-EMITTING DIODES MOUNTED BY FLIP-CHIP METHOD Russian patent published in 2016 - IPC H01L33/62 

FIELD: lighting; electricity.

SUBSTANCE: structure (10) of light-emitting diodes (LEDs) has semiconductor layers including a layer of p-type, an active layer and a layer of n-type. Layer of p-type has a lower surface and the layer of n-type has a top surface, through which light is emitted. Sections of p-type layer and active layer are bled, opening the layer of n-type. On the surface of the LED there is formed a pattern with the help of a photoresist and on open surfaces copper is deposited, forming p- and n-electrodes being in electrical contact with corresponding to them semiconductor layers. Between the p- and n-electrodes there is a gap. To ensure mechanical support of semiconductor layers within the gap, dielectric layer (34) is formed with subsequent filling of the gap with metal (42). Pattern is formed in metal to form bump contacts (40, 42, 44), which, in fact, cover the lower surface of the LED crystal, but do not short-circuit the electrodes.

EFFECT: uniform coating supports the semiconductor layer during next processing stages; invention ensures a stable to mechanical effects support structure and increased heat resistance.

15 cl, 9 dwg