INTEGRATION OF LEDS ON GALLIUM-NITRIDE WITH DEVICES ON ALUMINUM/GALLIUM NITRIDE, GALLIUM NITRIDE ON SILICON SUBSTRATES FOR LED AC Russian patent published in 2017 - IPC H01L27/15 H01L33/08 

FIELD: chemistry.

SUBSTANCE: method for manufacturing the epitaxial structure includes providing a substrate and a heterojunction package on the first substrate side and forming a LED package on GaN on the second substrate side . The heterojunction package includes an undoped layer of gallium nitride (GaN) and a doped layer of aluminum gallium nitride (AlGaN) on the undoped layer of GaN. The LED package on GaN includes a layer of GaN n-type over the substrate, a structure on GaN / nitride gallium indium (InGaN) with the multiple quantum wells (MQW) on the top layer of GaN n-type, a layer of AlGaN p-type on the top structure on GaN / InGaN n-type with the MQWs and a layer of GaN p-type on the top layer of AlGaN p-type. The heterojunction package contains one or more device associated with the LED package. These one or more device includes one or more of the field-effect transistor on heterojunction (HTEF) AlGaN / GaN and Schottky diode on AlGaN / GaN. At least, one of these devices is connected to the LED package on GaN.

EFFECT: quality improvement.

15 cl, 7 dwg