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2 523 747

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C2

(51)

IPC

H01L33/32(2010-01-01)

(21) (22)

Application

2011140129/28, 2010-02-04

(24)

Start date

2010-02-04

(22)

Actual filing date

2010-02-04

(45)

Published

2014-07-20

(72)

Inventor

Maklorin Melvin B.

(73)

Holder

Filips L'Jumildz Lajting Kompani, EhlehlsiKoninklejke Filips Ehlektroniks N.V.

BORON-CONTAINING III-NITRIDE LIGHT-EMITTING DEVICE Russian patent published in 2014 - IPC H01L33/32 

Abstract RU 2523747 C2

FIELD: physics, optics.

SUBSTANCE: invention relates to semiconductor light-emitting devices. The structure includes a III-nitride semiconductor structure comprising a light-emitting region located between an n-type region and a p-type region, wherein at least one layer in the light-emitting region is a Bx(InyGa1-y)1-xN light-emitting layer, 0.06≤x≤0.08 and 0.1≤y≤0.14, having a band gap energy and a bulk lattice constant corresponding to a lattice constant of a relaxed layer having the same composition as the Bx(InyGa1-y)1-xN light-emitting layer; an InGaN layer having the same band gap energy as the Bx(InyGa1-y)1-xN layer, has a bulk lattice constant corresponding to a lattice constant of a relaxed layer having the same composition as the InGaN layer; and the bulk lattice constant of the Bx(InyGa1-y)1-xN layer is less than the bulk lattice constant of the InGaN layer.

EFFECT: invention provides a III-nitride semiconductor structure, where at least one layer in the light-emitting region contains boron.

16 cl, 8 dwg

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RU 2 523 747 C2

Authors

Maklorin Melvin B.

Dates

2014-07-20—Published

2010-02-04—Filed

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