FIELD: lighting.
SUBSTANCE: method includes growing a semiconductor structure on a substrate that includes an aluminium-containing layer in direct contact with the substrate and a III-nitride light emitting layer, disposed between the n-type region and the p-type region. The method further includes removing the substrate and the transparent material in direct contact with the aluminium-containing layer.
EFFECT: enabling the creation of light emitting device with improved extraction of light.
12 cl, 8 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| III-NITRIDE LIGHT-EMITTING DEVICE HAVING LIGHT-EMITTING AREA WITH DOUBLE HETEROSTRUCTURE | 2006 |
|
RU2412505C2 |
| BORON-CONTAINING III-NITRIDE LIGHT-EMITTING DEVICE | 2010 |
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RU2523747C2 |
| NITRIDE SEMICONDUTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT | 2015 |
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| III-NITRIDE LIGHT-EMITTING DEVICES, GROWN ON TEMPLATES TO REDUCE STRAIN | 2007 |
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| METHOD OF MAKING LIGHT-EMITTING DEVICES BASED ON GROUP III NITRIDES GROWN ON STRESS RELIEF TEMPLATES | 2007 |
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| NITRIDE SEMICONDUCTOR ELEMENT AND METHOD OF MAKING SAME | 2011 |
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| ULTRAVIOLET NITRIDE HETEROSTRUCTURE LIGHT-EMITTING DIODE | 2013 |
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| LIGHT EMITTING DIODE ON SILICON SUBSTRATE | 2021 |
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| LIGHT-EMITTING DIODE | 2023 |
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| LIGHT-EMITTING DEVICE OF ELEMENTS OF III-V GROUPS THAT INCLUDES LIGHT-EMITTING STRUCTURE | 2010 |
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RU2559305C2 |
