METHOD OF MAKING LIGHT-EMITTING DEVICES BASED ON GROUP III NITRIDES GROWN ON STRESS RELIEF TEMPLATES Russian patent published in 2012 - IPC H01L33/16 H01L21/20 

FIELD: physics.

SUBSTANCE: present invention relates to growth techniques and designs of semiconductor light-emitting devices. The method of making a light-emitting device according to the invention involves steps for growing a III nitride structure on a substrate, wherein the III nitride structure has a template which in turn has a first layer grown directly on the substrate, wherein the first layer essentially does not contain indium; a second layer grown over the first layer, wherein the second layer is a non-monocrystalline layer which contains indium; and a third layer grown over the second layer and in direct contact with the second layer, wherein the third layer is a non-monocrystalline layer which contains indium; and device layers grown over the template, device layers containing a III nitride light-emitting layer between an n-type region and a p-type region. Another version of the method of making the light-emitting device is also provided.

EFFECT: invention reduces stress in the light-emitting device, which can improve operating characteristics of the device.

29 cl, 18 dwg