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2 468 466

(13)

(51)

IPC

H01L21/20(2006-01-01)

H01L29/78(2006-01-01)

(21) (22)

Application

2010139514/28, 2009-06-08

(24)

Start date

2009-06-08

(22)

Actual filing date

2009-06-08

(45)

Published

2012-11-27

(72)

Inventor

Khadejt Mantu K.Tolchinski Piter G.Chou Loren A.Loubychev DmitrijFasteno Zhoehl' M.Liu Ami V.K.

(73)

Holder

Intel Korporejshn

METHOD OF FORMING BUFFER ARCHITECTURE (VERSIONS) AND MICROELECTRONIC STRUCTURE FORMED THUS Russian patent published in 2012 - IPC H01L21/20 H01L29/78

Abstract RU 2468466 C2

FIELD: physics.

SUBSTANCE: method of forming buffer architecture involves forming a GaSb nucleating layer on a substrate, forming a Ga(Al)AsSb buffer layer on the GaSb nucleating layer, forming a lower In_0.52Al_0.48As barrier layer on the Ga(Al)AsSb buffer layer and forming a In_xAl_1-xAs transition layer on the lower In_0.52Al_0.48As barrier layer.

EFFECT: invention enables to make structures with quantum wells based on InGaAs with few defects and the required quality.

20 cl, 3 dwg

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RU 2 468 466 C2

Authors

Khadejt Mantu K.

Tolchinski Piter G.

Chou Loren A.

Loubychev Dmitrij

Fasteno Zhoehl' M.

Liu Ami V.K.

Dates

2012-11-27—Published

2009-06-08—Filed